Gunn Diode DC1279F-T94
LW36-600006
Active
Gallium Arsenide graded gap Gunn diode assembled in custom package for fundamental mode of operation at 94GHz.
Additional information
Product Data sheet
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Specifications
| Gain ripple full band | 4dB p-p |
| Spurious Outputs (Signal related in band | -60dBc |
| Spurious Outputs (LO leakage | -45dBc |
Product Applications
Test and Measurement
- Excellent ‘cold start’ performance at -40°C Low change in frequency with temperature Customised dF/dV specification available Low FM noise Increased efficiency compared with other GaAs Gunn devices Hermetic packaging Range of output powers; customised specification available Proven high reliability Repeatable performance in standard cavities Variety of reliability assurance testing available All products 100% millimetre-wave tested
