The Amplifier is designed for X band pulsed power applications with up to 80% duty cycle. The amplifier uses
high performance Gallium Nitride (GaN) power transistors to achieve high output power combined with a
respectable efficiency at X-band. The amplifier provides excellent thermal stability through the use of a high
thermal conductivity carrier. The product is ideally suited for high power ATC and surveillance radar, general
purpose high power output stages.
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